FW-GANS-003
Gallium Nitride (GaN) Substrates.
Key Specifications
| Chemical formula | GaN |
| Diameter (inch) | 2″ |
| Thickness (um) | 350 |
| Conduction Type | N-type |
| Orientation | C-axis (0001) |
Related products
FW-TEO2-006
FW-TEO2-006Tellurium dioxide (TeO2) crystal with high-quality factor and transparent in the 0.33um to 5um spectral range.
Key Specifications
| Chemical formula | TeO2 |
| Density (g/cm2) | 6 |
| Melting Point (C) | 733 |
| Transparent Wavelength (um) | 0.33 – 5.0 |
| Transmittance @632.8nm | >70% |
FW-SILW-002
FW-SILW-002High purity silicon wafers/substrates
Key Specifications
| Material | Silicon |
| Diameter (inch) | 2, 4, 6 |
| Thickness (um) | 275, 525, 675 |
| Orientation | (100) (111) (110) |
| Type | N or P |
FW-SAPP-001
FW-SAPP-001Sapphire (Al2O3) high purity wafers/substrates
Key Specifications
| Chemical formula | Al2O3 |
| Diameter (inch) | 2, 4, 6 |
| Thickness (um) | 430, 650, 1200 |
| Purity (%) | 99.996 |
| Orientation | C to M |
FW-GANT-004
FW-GANT-004Gallium Nitride (GaN) Templates
Key Specifications
| Chemical formula | GaN |
| Diameter (inch) | 2″ |
| Thickness (um) | 15, 20, 30, 40 |
| Conduction Type | N-type |
| Orientation | C-axis (0001) |